Epitaxial Silicon Oxynitride Layer on a 6H-SiC(0001) Surface
Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere
leads to the formation of a silicon oxynitride (Si4O5N3) epitaxial layer. A quantitative low-energy electron
diffraction analysis revealed that the Si4O5N3 layer has a hetero-double-layer structure: a silicate monolayer
on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in the unit cell,
which explains the fact that the structure is robust against air exposure. Scanning tunneling spectroscopy
measured on the Si4O5N3 layer shows a bulk SiO2-like band gap of9 eV. Great potential of this new
epitaxial layer for device applications is expected.
Fig. 1 The best-fit model of SiC(0001)-(root3 x root3)R30-Si4O5N3.
=== Original paper ===
Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface. Phys. Rev. Lett. 98 (2007) 136105-1-4.
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